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• W2082057424 abstract "Short period superlattices of the form mGaN/nAlN, where m, n denote integer numbers of monolayers, and with growth direction along the wurtzite c-axis are studied by ab initio calculations. The dependence of the band gaps on composition is compared with results obtained previously for mInN/nGaN superlattices. The strain caused by mismatch to the substrate leads to significant deformations of bonds in InN/GaN superlattices, whereas this effect is smaller in GaN/AlN superlattices. The general trends in gap behavior can to a large extend be related to the strength of the internal electric field, E, in the respective GaN and InN quantum wells. In the GaN/AlN superlattices E reaches values as high as 8 MV/cm, while in the InN/GaN superlattices E ≈ 15 MV/cm may be reached. The strong electric fields are caused by spontaneous and piezoelectric polarizations. The latter contribution dominates in InN/GaN superlattices." @default.
• W2082057424 created "2016-06-24" @default.
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• W2082057424 date "2015-06-01" @default.
• W2082057424 modified "2023-10-16" @default.
• W2082057424 title "Influence of strain and internal electric fields on band gaps in short period nitride based superlattices" @default.
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• W2082057424 doi "https://doi.org/10.1016/j.spmi.2015.02.033" @default.
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