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• W2082066315 abstract "In this paper, a selective area growth (SAG) approach for growing GaN microrods on patterned SiNx/Si(111) substrates by metal-organic chemical vapor deposition (MOCVD) is studied. The surface morphology, optical and structural properties of vertical GaN microrods terminated by pyramidal shaped facets (six {101¯1} planes) were characterized using scanning electron microscopy (SEM), room temperature photoluminescence (PL) and Raman spectroscopy, respectively. Measurements revealed high-quality GaN microcolumns grown with silane support. Characterized structures were grown nearly strain-free (central frequency of Raman peak of 567±1 cm−1) with crystal quality comparable to bulk crystals (FWHM=4.2±1 cm−1). Such GaN microrods might be used as a next-generation device concept for solid-state lighting (SSL) applications by realizing core-shell InGaN/GaN multi-quantum wells (MQWs) on the n-GaN rod base." @default.
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• W2082066315 date "2015-03-01" @default.
• W2082066315 modified "2023-10-11" @default.
• W2082066315 title "The controlled growth of GaN microrods on Si(111) substrates by MOCVD" @default.
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• W2082066315 doi "https://doi.org/10.1016/j.jcrysgro.2014.10.047" @default.
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