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- W2082067221 abstract "This paper reports a solution-based method for the application of multiple nanostructures on full surface of GZO/GaN-based LEDs to enhance light-extraction efficiency. Ga-doped ZnO (GZO) was deposited to a thickness of 1μm and an n <sup xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>+</sup> -InGaN/GaN short-period superlattice structure was grown to improve the electrical characteristics of the LEDs, including series resistance and operating voltage. A solution-based method was used to control the density of ZnO nanoparticles deposited on the SiO <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>2</sub> layer for use as self-assembled etching nanomasks. Multiple nanostructures were simultaneously formed on the surfaces of GZO, p-GaN, and n-GaN by dry etching. The proposed LEDs increase light output power by 10%-27% (at 20 mA) over that of regular GaN-based LEDs. The difference in light output power can be attributed to differences in the shape, thickness, and density of GZO and GaN nanostructures, resulting in a reduction in Fresnel reflection provided by the roughened surface of the GaN-based LEDs." @default.
- W2082067221 created "2016-06-24" @default.
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- W2082067221 date "2014-08-01" @default.
- W2082067221 modified "2023-09-24" @default.
- W2082067221 title "Multiple Nanostructures on Full Surface of GZO/GaN-Based LED to Enhance Light-Extraction Efficiency Using a Solution-Based Method" @default.
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- W2082067221 doi "https://doi.org/10.1109/jqe.2014.2329897" @default.
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