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- W2082224368 abstract "Abstract In this work, we present a novel scheme that involves a new fabrication process of gate structure metal–insulator–semiconductor (MIS) diode using IC technology. We use a bias-assisted microwave plasma chemical vapor deposition (BAMPCVD) system to synthesize P-doped and B-doped diamond. Based on our experimental results, it showed dendrite-like diamond with non-doped and nanotube-like diamond with B- or P- doping. Doping phosphorus or boron can enhance its electric characteristic by reducing the turn-on voltage and enhancing the emission current density. The turn-on voltage of non-doped, B-doped and P-doped is 15, 8 and 5 V, respectively. The field emission current (Ia) of non-doped, B-doped and P-doped is 4 μA (at 45 V), 76 μA (at 77 V) and 322 μA (at 120 V), respectively." @default.
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- W2082224368 date "2001-11-01" @default.
- W2082224368 modified "2023-10-18" @default.
- W2082224368 title "Electronic properties of phosphorus-doped triode-type diamond field emission arrays" @default.
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- W2082224368 doi "https://doi.org/10.1016/s0254-0584(01)00438-2" @default.
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