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• W2082309656 abstract "The field dependence of the hole generation rate, also known as the impact ionization coefficient α, in thin SiO <inf xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>2</inf> (< 20 nm) was characterized by measuring the negative flat-band shift due to hole trapping. In thicker oxides, <tex xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>alpha = alpha_{0}e^{-H/E}</tex> where H = 78 MV/cm for electric fields ranging from 7 to 14 MV/cm, which covers the field range from the onset of significant Fowler-Nordheim current to instant breakdown. The similar field dependences of α and charge-to-breakdown supports the model that hole generation and trapping leads to oxide wearout. Because of the fact that positive charge generation is observed for oxide voltage well below the SiO <inf xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>2</inf> bandgap, we propose that the generated holes arise from transition between band tails in the amorphous SiO <inf xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>2</inf> . It is also observed that α decreases rapidly when the applied oxide voltage is very low; thus α is a function of both oxide field and voltage in general. This suggests that ultra-thin oxide with low operating voltages might be a good candidate for high endurance E <sup xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>2</sup> PROM devices at very low oxide field." @default.
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• W2082309656 date "1986-03-01" @default.
• W2082309656 modified "2023-10-16" @default.
• W2082309656 title "Hole trapping and breakdown in thin SiO₂" @default.
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• W2082309656 doi "https://doi.org/10.1109/edl.1986.26332" @default.
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