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• W2082393559 abstract "The susceptibility against soft-errors in dynamic random access memories (DRAMs) has been evaluated using nuclear microprobes by monitoring various addresses of a memory cell array to determine the influence of upper wiring layers such as word lines, bit lines and other patterns. The correlations between irradiated positions of microprobes and monitored cell positions were discussed. The effect of buried implanted layers against carrier collection has also been investigated using ion-beam-induced-current (IBIC) measurement. IBIC measurement revealed that the retrograde well structure was more effective in suppressing soft errors than conventional well structures in bulk or epitaxial substrates." @default.
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• W2082393559 date "1995-12-01" @default.
• W2082393559 modified "2023-09-27" @default.
• W2082393559 title "Well Structure by High-Energy Boron Implantation for Soft-Error Reduction in Dynamic Randam Access Memories (DRAMs)" @default.
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• W2082393559 doi "https://doi.org/10.1143/jjap.34.6899" @default.
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