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- W2082502616 abstract "Epitaxial fluoride layers (CaF<SUB>2</SUB>, SrF<SUB>2</SUB> and CdF<SUB>2</SUB>) were grown and doped with rare- earth ions by means of molecular beam epitaxy. This technique allows creation of new fluoride heterostructures (including superlattices) with high level and controlled profile of doping. Photoluminescence spectra of divalent ions (Eu<SUP>2+</SUP> and Sm<SUP>2+</SUP>) were used to study strains and stress relaxation in the films. In the structures grown by MBE one can observe effects which are not actual in bulk crystals. They are crossing of 4f<SUP>6</SUP> and 4f<SUP>5</SUP>5d levels of Sm<SUP>2+</SUP> ions in CaF<SUB>2</SUB> layers with tensile strain as high as 2%, new shape of inhomogeneously broadened Sm<SUP>2+</SUP> zero phonon emission line in very thin CaF<SUB>2</SUB> layers arising from modification of strain fields of defects near the surface, bleaching of photoluminescence of RE ions in thin CaF<SUB>2</SUB>:Sm<SUP>2+</SUP> layers on Si(111) and in CdF<SUB>2</SUB>-CaF<SUB>2</SUB>:Eu<SUP>2+</SUP> superlattices. Luminescence of trivalent ions (Nd<SUP>3+</SUP> and Er<SUP>3+</SUP>) in CaF<SUB>2</SUB> films is quenched at much higher concentration of the dopants than in bulk crystals. It makes these films very attractive for potential optoelectronic applications." @default.
- W2082502616 created "2016-06-24" @default.
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- W2082502616 date "1996-01-03" @default.
- W2082502616 modified "2023-09-25" @default.
- W2082502616 title "Luminescence of rare-earth ions in epitaxial fluoride layers" @default.
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- W2082502616 doi "https://doi.org/10.1117/12.229165" @default.
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