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• W2082565860 abstract "The optical and structural properties of hydrogenated silicon films , deposited by radiofrequency (rf) magnetron sputtering at low temperature (Ts = 100 °C), were carefully investigated by means of optical transmission measurements (OT), Fourier transform infrared (IR) spectroscopy and spectroscopic ellipsometry (SE) technique. By varying the rf-power from 100 W to 350 W, and keeping all other parameters of the plasma constant, the growth rate increases up to 1.02 nm/s. A remarkable change in the hydrogen-bonding configurations for both wagging and stretching vibration modes was observed. The observed changes demonstrate definite structural transformation of the films from a completely amorphous phase to another one with crystalline Si when the rf-power is increased from 180 W to 200 W. The difference between the two phases is well revealed by the OT and the IR absorption results, and strongly confirmed by the SE ones. The effect of hydrogen on the band gap and on the microstructure of the films is discussed. • By varying the rf-power from 100 W to 350 W, the growth rate increases up to 10.2 Å/s. • A remarkable change in the hydrogen-bonding configurations was observed. • For films deposited at rf-power below 180 W, the structure is completely amorphous. • The crystallization occurs around 200 W. • The size grains of Si crystallites in the films depend on the rf-power." @default.
• W2082565860 created "2016-06-24" @default.
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• W2082565860 date "2013-10-01" @default.
• W2082565860 modified "2023-10-18" @default.
• W2082565860 title "Radiofrequency power effects on the optical and structural properties of hydrogenated silicon films prepared by radiofrequency magnetron sputtering" @default.
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• W2082565860 doi "https://doi.org/10.1016/j.tsf.2013.08.053" @default.
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