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- W2082771907 abstract "We present results from excimer laser processed poly-silicon thin film transistors fabricated on a plastic substrate. Except for the temperature rise during excimer laser irradiation for crystallization, the highest processing temperature that the substrate was subjected to was 110°C. Transistor field-effect mobility of 250 cm 2 /V·s and sub-threshold swing of 0.16 V/decade were measured in these devices. These are the best characteristics reported to date for a thin film transistor (TFT) on a plastic substrate. The performance is attributed to our optimized laser crystallization process of helium sputtered Si films, laser-assisted low-temperature doping processes, and transient annealing." @default.
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- W2082771907 date "2000-03-01" @default.
- W2082771907 modified "2023-09-25" @default.
- W2082771907 title "High Mobility Thin Film Transistors Fabricated on a Plastic Substrate at a Processing Temperature of 110°C" @default.
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- W2082771907 doi "https://doi.org/10.1143/jjap.39.l179" @default.
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