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• W2082776604 abstract "A mathematical model for deposition of polysilicon films on silicon wafers in a horizontal tube reactor by thermal decomposition of silane at low pressure is proposed. The influence of temperature, pressure and gas flow rate on the film thickness uniformity is studied experimentally and by the model. An optimization criterion accounting for the energy and material consumption is defined. The limits of the technological factor variations allowed are discussed and the optimization criterion values within these limits are calculated. The analysis presented, demonstrating the significance of the chosen factors for the production cost-price is of great practical importance." @default.
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• W2082776604 date "1990-11-01" @default.
• W2082776604 modified "2023-10-09" @default.
• W2082776604 title "Modeling and optimization of the growth of polycrystalline silicon films by thermal decomposition of silane" @default.
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• W2082776604 doi "https://doi.org/10.1016/0022-0248(90)90082-v" @default.
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