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- W2083138049 abstract "We studied a method for increasing the etching rate of SiN films in downflow plasma. It was confirmed that the etching rate of SiN films deposited by plasma‐enhanced chemical vapor deposition (PE‐CVD) was 50‐200 times higher than that of the films deposited by low‐pressure chemical vapor deposition (LP‐CVD). The activation energy for PE‐CVD SiN (PE‐SiN) was 0.62 kcal/mol and that for LP‐CVD SiN (LP‐SiN) was large, 5.3 kcal/mol, indicating that different etching reactions occurred. Assuming that the difference is caused by the many H atoms contained in PE‐SiN, we compared the etching rates by adding gaseous , water, and methanol, which include H atoms, to . The results show that the etching rate increased by a maximum factor of 10 for LP‐SiN and approximately a factor of 1.5 times for PE‐SiN. From these results, we propose the following etching mechanism for the enhancement in the etching rate. Hydrogen added to reacts with N atoms on the SiN films to form , which is then removed as a volatile component. With the removal of these N atoms, the SiN surface becomes Si rich; therefore, the etching reaction of Si atoms and the F radicals is accelerated, thereby increasing the etching rate. © 1999 The Electrochemical Society. All rights reserved." @default.
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- W2083138049 date "1999-09-01" @default.
- W2083138049 modified "2023-10-17" @default.
- W2083138049 title "Enhancement of Etching Rate of SiN Films by Addition of Gases Containing Hydrogen to CF 4 / O 2" @default.
- W2083138049 doi "https://doi.org/10.1149/1.1392492" @default.
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