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- W2083283457 abstract "This paper is all about the current-voltage modeling of Bilayer Graphene Nanoribbons (BGNRs) Schottky Diode. The metal semiconductor devices were used in the beginning of the year 1900s. We can make a point contact diode by touching a metallic whisker to an exposed semi-conductor surface. The metal semiconductor diodes were replaced by the p-n junction in the 1950's because they were not easily reproduced or found to be mechanically reliable. As a result the practicability of making use of the semiconductor and vacuum technology to construct reproducible and dependable metal semiconductor contacts. Therefore, a high consideration occurs for the schottky barrier diode or metal semiconductor rectifying contact. A model to evaluate or design the current-voltage (I-V) characteristics of BGNRs schottky diode as a function of physical parameters, such as GNR width (w), effective mass (m∗), gate insulator thickness (t ins ), and electrical parameters, such as schottky barrier (SB) height (φ SB ) are presented in this paper." @default.
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- W2083283457 date "2011-09-01" @default.
- W2083283457 modified "2023-09-26" @default.
- W2083283457 title "Current-voltage modeling of Bilayer Graphene Nanoribbon Schottky Diode" @default.
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- W2083283457 doi "https://doi.org/10.1109/rsm.2011.6088337" @default.
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