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- W2083416615 abstract "We report the results of an investigation to grow thin Si films on Si substrates at low substrate temperatures using ionized SiH4 gas generated with a Kaufman type ion gun. This investigation shows island-growth at higher substrate temperatures (500–700 °C) in the form of square-based pyramids. By lowering the substrate temperature to 300 °C, we were able to achieve a planar growth with a growth rate of 8 Å per minute. Transmission electron microscopy (TEM) is used to study the crystalline quality of the samples prepared at different temperatures. The study by high resolution TEM of the sample grown at 300 °C indicates the presence of microtwins in the Si epi-layer." @default.
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- W2083416615 date "1995-08-01" @default.
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- W2083416615 title "Ion beam vapor deposition for Si epitaxy at low substrate temperatures" @default.
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