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• W2083439778 abstract "InAsxP1−x/InP quantum wells (QWs) with excellent crystalline and interfacial quality are grown by metal organic vapor phase epitaxy as confirmed from the cross-sectional transmission electron microscopy, high resolution x-ray diffraction and photoluminescence measurements. The electron confinement in InAsxP1−x/InP QW states is determined by capacitance voltage measurements, where we find that the electron accumulation increases with increasing QWs thickness and arsenic composition. This is explained by the variation of the band offset and hence the effective change in the position of the electronic energy level from Fermi level with QWs composition and thickness. The conduction band offset (ΔEc) for InAsxP1−x/InP QWs has been obtained by solving the self consistent set of Schrodinger and Poisson equations and fitting the theoretical carrier density profile with the apparent carrier density measured from experiments. The ΔEc values in strained InAsxP1−x/InP QWs have been obtained which fits to the expression ΔEc(x) = 402-350(1−x)meV for 0.38 &lt;x &lt;0.62." @default.
• W2083439778 created "2016-06-24" @default.
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• W2083439778 date "2011-04-15" @default.
• W2083439778 modified "2023-10-06" @default.
• W2083439778 title "Determination of band offsets in strained InAsxP1−x/InP quantum well by capacitance voltage profile and photoluminescence spectroscopy" @default.
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• W2083439778 doi "https://doi.org/10.1063/1.3561495" @default.
• W2083439778 hasPublicationYear "2011" @default.
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