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• W2083444757 abstract "We have investigated the near-gap recombinations in Sn-doped Al x Ga 1- x As by photoluminescence. By analyzing the variations of spectral lineshapes under various excitation intensities, only one type of recombination was assigned to associate with the Sn-related donor state, which was different from the hydrogenlike shallow donor states and the DX centers. Phonon replicas were observed to accompany the recombination in the samples with high AlAs mole fractions of direct gaps, as well as in those of indirect gaps. The Franck-Condon shift and the phonon energy of the recombination were found to increase with increasing AlAs mole fraction. This behavior was explained in terms of a variation of local lattice distortion around an ionized Sn-related donor and a weighted average of two local vibrational mode frequencies of the Sn-related donor." @default.
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• W2083444757 date "1993-08-01" @default.
• W2083444757 modified "2023-09-29" @default.
• W2083444757 title "Photoluminescence Properties of Sn-Related Donor State in Al_xGa_1-xAs" @default.
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• W2083444757 doi "https://doi.org/10.1143/jjap.32.3338" @default.
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