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- W2083445604 abstract "Strained−layer superlattices form a broad new class of semiconductor materials with tailorable electronic properties. We have succeeded in growing a GaAsxP1−x/GaP(100) strained−layer superlattice (SLS). The structure was grown by alternate metalorganic chemical vapor deposition of thin (60 Å)layers (20 each) of GaAs0.4P0.6 and GaP. These layers were grown onto a GaAsxP1−x layer which was graded in composition from x = 0 (composition of underlying GaP substrate)to x = 0 (average composition of the SLS). Photoluminescense studies of the SLS were carried out to determine the optical band gap. At T = 78 K, the spectrum shows a dominant band−edge peak at 2.03 eV as well as weaker peaks at higher energies. Tight binding and effective mass calculations, also carried out, predict a direct band gap (due to zone folding) of 2.02 eV and higher lying transition energies which are in good agreement with these data." @default.
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- W2083445604 date "1982-07-15" @default.
- W2083445604 modified "2023-10-14" @default.
- W2083445604 title "A GaAs<i>x</i>P1−<i>x</i>/GaP strained-layer superlattice" @default.
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- W2083445604 doi "https://doi.org/10.1063/1.93450" @default.
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