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- W2083534500 abstract "A high-speed flexible transistor made with an ultrapure carbon nanotube (CNT) solution is reported. The carrier transport layer of the CNT-based flexible transistor is formed at room temperature by dispensing a tiny droplet of an electronics-grade CNT solution. Ultra high field-effect mobility of ~ 48,000 cm2/(V×s) has been demonstrated on a thin-film field effect transistor (TFT). A simple trans-impedance voltage follower circuit was made using the CNT-TFT on a transparency film. The circuit exhibited a high modulation speed of 312 MHz and a large current-carrying capacity beyond 20 mA. The transparency and the sheet resistance of the CNT-film were also characterized at different wavelengths. The ink-jet printing-compatible process would enable mass production of large-area electronic circuits on virtually any desired flexible substrate at low cost and high throughput." @default.
- W2083534500 created "2016-06-24" @default.
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- W2083534500 date "2008-04-03" @default.
- W2083534500 modified "2023-09-27" @default.
- W2083534500 title "High-speed transparent flexible electronics" @default.
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- W2083534500 doi "https://doi.org/10.1117/12.777348" @default.
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