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- W2083604857 abstract "The oxidation of heavily phosphorus doped (⩽0.001 Ω cm 〈111〉) silicon wafers yielded nonuniform oxide films at thicknesses ⩽2000 Å. The variation of the film thickness and oxidation kinetics was influenced by the dopant concentration and the associated ’’striations’’ in the silicon." @default.
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- W2083604857 date "1976-04-01" @default.
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- W2083604857 title "Thermal oxidation of silicon wafer with ’’striations’’ from heavy phosphorus doping" @default.
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- W2083604857 doi "https://doi.org/10.1063/1.88775" @default.
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