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• W2083666426 startingPage "081303" @default.
• W2083666426 abstract "The chemical reaction near the crucible wall during directional solidification of Si crystals for solar cells has been investigated. Fragments of the crucible that were used for the crystal growth of a Si ingot were examined. As results, we found that a chemical reaction took place at the coating/crucible interface and that silicon oxynitride particles precipitated near the crucible wall. The oxynitride precipitates were determined as stoichiometric Si2N2O and were revealed not to be amorphous but of orthorhombic crystal symmetry. We show crucial evidence of the formation of stoichiometric Si2N2O microcrystalline precipitates inside the Si crystal." @default.
• W2083666426 created "2016-06-24" @default.
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• W2083666426 date "2013-08-01" @default.
• W2083666426 modified "2023-10-16" @default.
• W2083666426 title "Formation of Si₂N₂O Microcrystalline Precipitates near the Quartz Crucible Wall Coated with Silicon Nitride in Cast-Grown Silicon" @default.
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• W2083666426 doi "https://doi.org/10.7567/apex.6.081303" @default.
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