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- W2083710899 abstract "In order to obtain a SOI layer over the whole surface, techniques using two ELO processes are presented. In the first ELO process, the silicon epitaxial layer grows vertically through openings between the <100> SiO 2 stripes and laterally across SiO 2 stripes. In the second ELO process, the silicon epitaxial layer grows laterally over the new SiO 2 layer linking the SiO 2 stripes at the bottom of the trench etched in the silicon epitaxial layer, between the SiO 2 stripes." @default.
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- W2083710899 date "1988-08-01" @default.
- W2083710899 modified "2023-09-24" @default.
- W2083710899 title "Epitaxial Lateral Overgrowth (ELO) of Silicon on the Whole Surface" @default.
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- W2083710899 doi "https://doi.org/10.1143/jjap.27.1536" @default.
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