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• W2083755672 abstract "a-IGZO films were deposited on Si substrates by d.c sputtering technique with various working power densities (pd) in the range of 0.74–2.22 W/cm2. The correlation between material properties and their effects on electrical stability of a-IGZO thin-film transistor (TFTs) was studied as a function of pd. At a pd of 1.72 W/cm2 a-IGZO film had smoothest surface roughness (0.309 nm) with In-rich and Ga-poor cation compositions as a channel. This structurally ordered TFTs exhibited a high field effect mobility of 9.14 cm2/Vs, a sub-threshold swing (S.S.) of 0.566 V/dec, and an on–off ratio of 107. Additionally, the Vth shift in hysteresis loop is almost eliminated. It was shown that the densification of the a-IGZO film resulted in the reduction of its interface trap density (1.83 × 1012 cm−2), which contributes for the improvement in the electrical and thermal stability." @default.
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• W2083755672 date "2013-01-01" @default.
• W2083755672 modified "2023-10-10" @default.
• W2083755672 title "Enhancement of electrical stability of a-IGZO TFTs by improving the surface morphology and packing density of active channel" @default.
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• W2083755672 doi "https://doi.org/10.1016/j.cap.2012.07.016" @default.
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