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- W2083844381 abstract "Abstract We demonstrate that photoluminescence‐excitation (PLE) spectroscopy is applicable to probe effects of the surface damages on the carrier transport in Al x Ga 1–x N/GaN heterostructures by systematically characterizing as‐grown and plasma‐exposed samples. The characterization of the surface morphology with atomic force microscopy clarifies that the plasma exposure modifies the atomic steps and pits on the Al x Ga 1–x N surface. The PLE spectrum of the as‐grown sample measured at the energy of the photoluminescence from the GaN layer shows a step rising from the Al x Ga 1–x N fundamental transition energy, which reflects the photogenerated‐carrier injection from the Al x Ga 1–x N layer to the GaN layer, while the rising step disappears in the plasma‐exposed sample. In contrast, the reflectance spectra are the same in the two samples; namely, the excitonic transition is hardly changed. Thus, it is concluded that PLE spectroscopy is highly sensitive to probe the carrier‐transport characteristics in the Al x Ga 1–x N/GaN heterostructure. (© 2008 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)" @default.
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- W2083844381 date "2008-05-01" @default.
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- W2083844381 title "High sensitivity of photoluminescence- excitation spectroscopy for probing effects of plasma-induced surface damages on carrier transport in AlxGa1–xN/GaN heterostructures" @default.
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- W2083844381 doi "https://doi.org/10.1002/pssc.200778437" @default.
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