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• W2083874104 abstract "Intense white (to the eye) luminescence has been obtained by multiple implantation of Si+ and C+ ions into thermal SiO2 and a post-implantation annealing process. This white emission is a consequence of the convolution of three luminescence peaks centred at about 1.45 eV (infrared with a long tail in the red), 2.1 eV (yellow) and 2.8 eV (blue). These emissions have been correlated to the synthesis of nanocrystals of Si and SiC, and the existence of C-rich precipitates. Cross section TEM shows a buried layer with dark contrast, which correlates with the maximum of the C implanted profile, and likely with a high density of C-rich amorphous domains. Besides, two kinds of nanocrystalline precipitates are found, which have been identified as Si and hexagonal 6H–SiC by electron diffraction experiments. To our knowledge, these data provide the first experimental evidence on the ion beam synthesis of nanocrystalline 6H–SiC embedded in SiO2. Correlation with previous data gives support to the assignment of the infrared, yellow and blue peaks with the Si, C-rich and SiC precipitate phases and/or its interfaces with SiO2." @default.
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• W2083874104 date "2000-03-01" @default.
• W2083874104 modified "2023-10-18" @default.
• W2083874104 title "Ion beam synthesis of semiconductor nanoparticles for Si based optoelectronic devices" @default.
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• W2083874104 doi "https://doi.org/10.1016/s0168-583x(99)00690-4" @default.
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