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- W2083987865 abstract "We present the piezoresistive and noise measurement results on junctionless nanowire field-effect transistor (JL-NWFET). Results reveal the channel doping and gate bias impacts on the piezoresistance, threshold voltage and low frequency noise (LFN). In JL-NWFET, at a doping level of 6.7 × 10 <sup xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>18</sup> cm <sup xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>-3</sup> , we found 91% increment in the piezoresistive effect compared to device with a doping level 6.7 × 10 <sup xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>19</sup> cm <sup xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>-3</sup> . The JL-NWFET shows ~5 orders of magnitude lower spectral noise than the inversion mode FETs, and LFN is found less sensitive to gate bias voltage. Channel doping shows a wide tunability of threshold voltage without any influence on LFN. The picoampere drain current noise helps achieve a superior resolution (minimum detectable strain) and formulate JL-NWFET as an ultrasensitive sensing element for the nanoelectromechanical sensors." @default.
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- W2083987865 date "2012-01-01" @default.
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- W2083987865 title "Minimum detectable strain improvement in junctionless nanowire FET sensors" @default.
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- W2083987865 doi "https://doi.org/10.1109/memsys.2012.6170403" @default.
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