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• W2084227107 abstract "Abstract The high-resolution imaging technique is applied systematically to study the Σ=1 (type A) and Σ = 3 (type B) NiSi2/Si interfaces. Possible structural models for Σ = 1 (type A) and Σ = 3 (type B) NiSi2/Si interfaces can be completely deduced from the dichromatic constrained coincidence site lattice (CCSL) patterns. For the Σ = 1 NiSi2(001)/(001)Si interface, new interface structures have been found and a 2 × 1 reconstructed interface structure involving a difference in composition has also been observed. The new interface structures were confirmed from through-focal series of high-resolution images from two orthogonal 〈110〉 beam directions. Domain-related interface structures coexisting in Σ = 1 NiSi2(001)/(001)Si interfaces were found to be separated by a ¼〈111〉 type of dislocation which is associated with a demi-step. There is only one interface structure observed in both Σ = 1 and Σ = 3 NiSi2(111)/(111)Si interfaces where the interfacial Ni atoms has been determined to be sevenfold coordinated. Two DSC dislocations associated with steps were identified in a Σ = 3 NiSi2(111)/(111)Si interface. The Burgers vectors of the DSC dislocations were determined to be 1/12[111]Si and ⅓[111]Si. Both DSC dislocations are associated with a complete step with the vector being ½[110]Si. The long-period boundaries of Σ = 3 NiSi2(111)/(115)Si and NiSi2(221)/(001)Si have been shown to decompose into short period of symmetrical NiSi2(111)/(111)Si and NiSi2(112)/(112)Si atomic facets which resembles the asymmetrical tilt grain boundary case. The coexistence of two domain-related atomic faceting interfaces in the Σ = 3 NiSi2(111)/(115)Si and NiSi2(221)/(001)Si has also been observed in different areas of an interface. They are separated by a ¼〈111〉 type dislocation associated with a demi-step. The Burgers vector and step of a dislocation required to separate two domain structures and that of DSC dislocations in the Σ = 3 NiSi2/Si interface can be derived from consideration of the CCSL model." @default.
• W2084227107 created "2016-06-24" @default.
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• W2084227107 date "1993-09-01" @default.
• W2084227107 modified "2023-09-27" @default.
• W2084227107 title "The atomic structure of Σ = 1 and Σ = 3 NiSi2/Si interfaces" @default.
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• W2084227107 doi "https://doi.org/10.1080/01418619308213985" @default.
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