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- W2084352505 abstract "Abstract The evolution of the surface morphology of homoepitaxial, MBE-grown GaAs(0 0 1)-layers was studied during growth interruptions by in situ RHEED (reflection high-energy electron diffraction) as well as by ex situ AFM (atomic force microscopy) and REM (reflection electron microscopy). The recovery of the RHEED intensity during annealing was correlated with a significant decrease of the densities of steps, islands and holes, seen in AFM and REM images, obtained from quenched samples. While islands seem to be dissolved by Ostwald ripening, the densities of steps and holes were found to approach saturation values. The appearance of anisotropic shapes of islands and holes, and characteristic changes during annealing were attributed to different mechanisms governing surface kinetics. It is concluded that, while diffusion of monomers dominate the growth periods, formation and diffusion of GaAs molecules is responsible for the changes of anisotropy during annealing under As pressure." @default.
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- W2084352505 date "1998-10-01" @default.
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- W2084352505 title "In situ RHEED, AFM, and REM investigations of the surface recovery of MBE-grown GaAs(001)-layers during growth interruptions" @default.
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- W2084352505 doi "https://doi.org/10.1016/s0022-0248(98)00502-8" @default.
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