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- W2084463424 abstract "Abstract Co/Ti bimetallic layers and a TiN capping layer were sequentially deposited on a SIMOX wafer. The influence of the residual oxide on the Si surface was reduced by depositing Ti first. Subsequently an epitaxial CoSi 2 film was grown by the interaction of the Co with the Si overlayer of the SIMOX through a multistep anneal in a nitrogen ambient. Both Rutherford backscattering analysis and cross-sectional transmission electron microscopy have shown that a good quality epitaxial growth of CoSi 2 with an abrupt interface has been achieved. The interface contained only a few coherent steps which were generated to relax the mismatch strain of the CoSi 2 with the Si layer. A minimum channeling yield of 30% was achieved for the epitaxial CoSi 2 film. Although the value is higher than that of CoSi 2 formed on bulk single-crystalline Si, it is comparatively low for epitaxial CoSi 2 growth on the Si(100) overlayer of SIMOX when formed by a solid-phase reaction." @default.
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- W2084463424 date "1995-03-01" @default.
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- W2084463424 title "Growth of epitaxial CoSi2 on SIMOX material by a solid-phase reaction of deposited TiN/Co/Ti layers" @default.
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- W2084463424 doi "https://doi.org/10.1016/0168-583x(94)00517-6" @default.
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