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• W2084826500 endingPage "15224" @default.
• W2084826500 startingPage "15214" @default.
• W2084826500 abstract "The effect of ion mass on ion-beam-induced epitaxial crystallization of silicon has been examined for five types of ion (C, Si, Ge, Ag, Au) at energies of 1.5, 3.0, and 5.6 MeV. Regrowth rates have been normalized to the number of displacements or nuclear energy deposition at the interface to evaluate the contribution of defect generation to crystal growth. The normalized regrowth rate increased by a factor of 4 with decreasing ion mass from Au to C, showing a similar behavior to dose rate dependences previously reported at lower ion energies. However, the dose rate dependence for 3.0 MeV Au and Ag deviated from this mass dependence curve at low dose rates, indicating that significant cascade density effects (instantaneous dose rate effects) coexist with average dose rate effects. This implies that the crystal growth rate is affected by defect interactions within individual cascades as well as by defect interactions between different cascades. Activation energies measured for four types of ion at 3.0 MeV are also mass dependent and varied from 0.18 to 0.40 eV. These results indicate that ion-beam-induced epitaxial crystallization cannot be characterized by a single activation energy. Our data have been compared with a number of models for ion-beam-induced crystallization and found to be inconsistent with a process controlled by a single defect type. We suggest that several rate-limiting defect processes may be involved and the dominance of a single defect depends on the ion mass (cascade density), average dose rate, and temperature regime." @default.
• W2084826500 created "2016-06-24" @default.
• W2084826500 creator A5039288936 @default.
• W2084826500 creator A5056213756 @default.
• W2084826500 creator A5081197222 @default.
• W2084826500 date "1999-06-15" @default.
• W2084826500 modified "2023-09-23" @default.
• W2084826500 title "Mass effects on regrowth rates and activation energies of solid-phase epitaxy induced by ion beams in silicon" @default.
• W2084826500 cites W1967487109 @default.
• W2084826500 cites W1968970207 @default.
• W2084826500 cites W1977211873 @default.
• W2084826500 cites W1979027738 @default.
• W2084826500 cites W1983041661 @default.
• W2084826500 cites W1985572293 @default.
• W2084826500 cites W1991952303 @default.
• W2084826500 cites W1997898828 @default.
• W2084826500 cites W1998893051 @default.
• W2084826500 cites W2001228781 @default.
• W2084826500 cites W2001351009 @default.
• W2084826500 cites W2005819940 @default.
• W2084826500 cites W2007025446 @default.
• W2084826500 cites W2013605471 @default.
• W2084826500 cites W2013823859 @default.
• W2084826500 cites W2016400913 @default.
• W2084826500 cites W2018475261 @default.
• W2084826500 cites W2022407295 @default.
• W2084826500 cites W2029220033 @default.
• W2084826500 cites W2035045240 @default.
• W2084826500 cites W2038384676 @default.
• W2084826500 cites W2040029718 @default.
• W2084826500 cites W2048306058 @default.
• W2084826500 cites W2059447770 @default.
• W2084826500 cites W2059530055 @default.
• W2084826500 cites W2060197255 @default.
• W2084826500 cites W2065513300 @default.
• W2084826500 cites W2066167578 @default.
• W2084826500 cites W2066233350 @default.
• W2084826500 cites W2066321696 @default.
• W2084826500 cites W2072996532 @default.
• W2084826500 cites W2082452568 @default.
• W2084826500 cites W2084627127 @default.
• W2084826500 cites W2086559718 @default.
• W2084826500 cites W2087168628 @default.
• W2084826500 cites W2102499776 @default.
• W2084826500 cites W2109251276 @default.
• W2084826500 cites W2110840924 @default.
• W2084826500 cites W2129194705 @default.
• W2084826500 cites W2130896723 @default.
• W2084826500 cites W2152288480 @default.
• W2084826500 cites W2236014704 @default.
• W2084826500 doi "https://doi.org/10.1103/physrevb.59.15214" @default.
• W2084826500 hasPublicationYear "1999" @default.
• W2084826500 type Work @default.
• W2084826500 sameAs 2084826500 @default.
• W2084826500 citedByCount "26" @default.
• W2084826500 countsByYear W20848265002012 @default.
• W2084826500 countsByYear W20848265002014 @default.
• W2084826500 countsByYear W20848265002015 @default.
• W2084826500 countsByYear W20848265002016 @default.
• W2084826500 countsByYear W20848265002017 @default.
• W2084826500 countsByYear W20848265002018 @default.
• W2084826500 countsByYear W20848265002019 @default.
• W2084826500 crossrefType "journal-article" @default.
• W2084826500 hasAuthorship W2084826500A5039288936 @default.
• W2084826500 hasAuthorship W2084826500A5056213756 @default.
• W2084826500 hasAuthorship W2084826500A5081197222 @default.
• W2084826500 hasConcept C110738630 @default.
• W2084826500 hasConcept C113196181 @default.
• W2084826500 hasConcept C121332964 @default.
• W2084826500 hasConcept C145148216 @default.
• W2084826500 hasConcept C171250308 @default.
• W2084826500 hasConcept C178790620 @default.
• W2084826500 hasConcept C184779094 @default.
• W2084826500 hasConcept C185592680 @default.
• W2084826500 hasConcept C19067145 @default.
• W2084826500 hasConcept C192562407 @default.
• W2084826500 hasConcept C199360897 @default.
• W2084826500 hasConcept C203036418 @default.
• W2084826500 hasConcept C22423302 @default.
• W2084826500 hasConcept C2524010 @default.
• W2084826500 hasConcept C2778312390 @default.
• W2084826500 hasConcept C2779227376 @default.
• W2084826500 hasConcept C2781285689 @default.
• W2084826500 hasConcept C33923547 @default.
• W2084826500 hasConcept C34146451 @default.
• W2084826500 hasConcept C41008148 @default.
• W2084826500 hasConcept C41999313 @default.
• W2084826500 hasConcept C43617362 @default.
• W2084826500 hasConcept C49040817 @default.
• W2084826500 hasConcept C50774322 @default.
• W2084826500 hasConcept C544956773 @default.
• W2084826500 hasConcept C57160762 @default.
• W2084826500 hasConceptScore W2084826500C110738630 @default.
• W2084826500 hasConceptScore W2084826500C113196181 @default.
• W2084826500 hasConceptScore W2084826500C121332964 @default.
• W2084826500 hasConceptScore W2084826500C145148216 @default.
• W2084826500 hasConceptScore W2084826500C171250308 @default.
• W2084826500 hasConceptScore W2084826500C178790620 @default.

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