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- W2084843635 abstract "Si/Si0.85Ge0.15/Si p-type modulation-doped double heterostructures have been grown by the ultrahigh vacuum/chemical vapor deposition technique, and mobility enhancement has been observed at low temperatures. For heterostructures with Si layers doped with boron to ∼1×1019 cm−3, hole mobilities of ∼900 cm2/V s at 14 K have been obtained. No carrier freeze-out behavior has been observed at low temperatures. The existence of two-dimensional hole gas was determined by the tilted-field Shubnikov–de Haas measurement. Both Si/SiGe and SiGe/Si heterointerfaces were found to be equivalent and of excellent interfacial quality. The valence-band maximum of Si0.85Ge0.15 alloy has been estimated to be ≂0.95 meV higher than that of Si. A hole effective mass of 0.44±0.03m0, which is consistent with the interpolation of the bulk band structures for the Si0.85Ge0.15 alloy, has been obtained for the heterostructure." @default.
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- W2084843635 date "1989-06-26" @default.
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- W2084843635 title "Two-dimensional hole gas in Si/Si0.85Ge0.15/Si modulation-doped double heterostructures" @default.
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- W2084843635 doi "https://doi.org/10.1063/1.101019" @default.
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