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- W2084861454 abstract "Abstract By using transient-capacitance techniques we probe the mechanism of hole transport in amorphous/crystalline silicon heterojunction solar cells. The devices are formed by depositing undoped amorphous silicon followed by p-type amorphous silicon on n-type crystalline silicon wafers. The capacitance transients indicate that hole transport from p-type amorphous silicon to n-type crystalline silicon is hindered by hole accumulation in the depletion region of the crystalline silicon. The results are explained with a model based on electrostatic repulsion owing to hole build-up at the crystalline/amorphous interface. We apply these results to other heterojunction solar cells." @default.
- W2084861454 created "2016-06-24" @default.
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- W2084861454 date "2014-10-01" @default.
- W2084861454 modified "2023-09-27" @default.
- W2084861454 title "Effect of band mismatch on minority carrier transport in heterojunction solar cells" @default.
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- W2084861454 doi "https://doi.org/10.1016/j.solmat.2013.11.012" @default.
- W2084861454 hasPublicationYear "2014" @default.
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