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• W2084991014 abstract "With the rapid development of chemical mechanical polishing technique as well as its increasing application in IC foundry, the abrasives of slurry are required to have different specifications in terms of size and size’s distribution, which play a vital role in the material removal and defect control. In this study, we monitor in detail the growth process of colloidal silica abrasives changing from the tiny nuclei to large nanoparticles by means of the electron microscopy images. Using the procedure we develop, we are capable of producing monodisperse colloidal silica nanoparticles ranging from 60 to 130 nm in diameter, which are mostly often applied as abrasives in chemical mechanical planarization/polishing (CMP) process of integrated circuit (IC) manufacturing. The physicochemical properties of the silica synthesized by our procedure are also characterized by the X-ray diffraction (XRD) patterns and thermal analysis. The polishing test adopting the colloidal silica as abrasives is performed on silicon wafer to evaluate the CMP properties." @default.
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• W2084991014 date "2010-11-01" @default.
• W2084991014 modified "2023-10-11" @default.
• W2084991014 title "Investigation on the controllable growth of monodisperse silica colloid abrasives for the chemical mechanical polishing application" @default.
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• W2084991014 doi "https://doi.org/10.1016/j.mee.2009.10.005" @default.
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