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- W2085065146 abstract "Noise measurements are reported for nickel-doped germanium, manganese-doped germanium, gold-doped germanium, indium antimonide and tellurium. For nickel-doped germanium the noise spectra are found to be consistent with the g-r noise theory for double acceptor systems. The various capture cross-sections have been determined. At low temperatures the upper nickel level acts as a recombination center (hole trap). The noise spectra for manganese-doped germanium are complex at temperatures close to 77°K. The noise is extremely low and consequently a large detectivity as a radiation detector is to be expected. For gold-doped germanium, spectra were observed which are not of the usual form for multi-step relaxation processes. An explanation is suggested by noticing that the dielectric relaxation time for these samples is larger than the lifetime so that space charge transients can exist. Some noise data are given for indium antimonide together with an estimate for the noise equivalent power. Finally some features of noise in tellurium single crystals are reported." @default.
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- W2085065146 date "1961-12-01" @default.
- W2085065146 modified "2023-09-27" @default.
- W2085065146 title "Generation-recombination noise in various photoconductive semiconductors" @default.
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- W2085065146 doi "https://doi.org/10.1016/0022-3697(61)90287-6" @default.
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