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• W2085078082 abstract "The self-assembling of InAs quantum wires on (001) InP substrates during chemical beam epitaxy has been studied. The samples were characterized by reflection high-energy electron diffraction (RHEED), atomic force microscopy, and high-resolution transmission electron microscopy (HRTEM). By monitoring the RHEED chevron structures along the [11̄0] direction, we studied the facets formation during the initial states of InAs growth. The facets angles measured by HRTEM are in perfect agreement with the angles between chevron streaks. A time dependence of the chevron streaks angles is reported and correlated to the wire formation. These results can be interpreted using nonequilibrium models existing in literature." @default.
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• W2085078082 date "2001-12-03" @default.
• W2085078082 modified "2023-10-02" @default.
• W2085078082 title "Faceting evolution during self-assembling of InAs/InP quantum wires" @default.
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• W2085078082 doi "https://doi.org/10.1063/1.1424476" @default.
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