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• W2085153672 abstract "Electric-field-induced switching of material’s magnetization is a promising approach for achieving energy-efficient memory devices. By taking advantage of the strong magnetoelectric coupling with a BaTiO3 substrate, a small electric field is used to switch a FeRh thin film from anti- to ferromagnetic above room temperature. Controlling magnetism by means of electric fields is a key issue for the future development of low-power spintronics1. Progress has been made in the electrical control of magnetic anisotropy2, domain structure3,4, spin polarization5,6 or critical temperatures7,8. However, the ability to turn on and off robust ferromagnetism at room temperature and above has remained elusive. Here we use ferroelectricity in BaTiO3 crystals to tune the sharp metamagnetic transition temperature of epitaxially grown FeRh films and electrically drive a transition between antiferromagnetic and ferromagnetic order with only a few volts, just above room temperature. The detailed analysis of the data in the light of first-principles calculations indicate that the phenomenon is mediated by both strain and field effects from the BaTiO3. Our results correspond to a magnetoelectric coupling larger than previous reports by at least one order of magnitude and open new perspectives for the use of ferroelectrics in magnetic storage and spintronics." @default.
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• W2085153672 date "2014-01-26" @default.
• W2085153672 modified "2023-10-07" @default.
• W2085153672 title "Electric-field control of magnetic order above room temperature" @default.
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• W2085153672 doi "https://doi.org/10.1038/nmat3870" @default.
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