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- W2085164013 abstract "The sensor response of p-ZnO/n-ZnO structures was studied to 500 and 1000 ppm hydrogen at 300 and 400 °C. The p–n junctions behaved like tunnel diodes and were insensitive to hydrogen below 300 °C. The p-ZnO/n-ZnO junctions were fabricated by adopting techniques like d.c. sputtering (for n-ZnO) and modified CVD in a reverse spray mode (for p-ZnO), respectively. The sensitivity of the device increased and the response time decreased with increasing the operating temperature from 300 to 400 °C at each hydrogen concentration. A probable sensing mechanism has been discussed." @default.
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- W2085164013 date "2006-09-01" @default.
- W2085164013 modified "2023-10-10" @default.
- W2085164013 title "Hydrogen sensitivity of ZnO p–n homojunctions" @default.
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- W2085164013 doi "https://doi.org/10.1016/j.snb.2005.11.018" @default.
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