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Matches in SemOpenAlex for { <https://semopenalex.org/work/W2085174232> ?p ?o ?g. }

• W2085174232 abstract "Dense and atomically flat AlN film with root-mean-square roughness value of 0.32 nm was grown on sapphire substrate at a relatively lower temperature by using a three-step epitaxy technique. On the basis of this AlN template, AlGaN-based multiple quantum wells (MQWs) with atomically flat hetero-interfaces were epitaxially grown to suppress nonradiative recombination by introducing In as a surfactant during simultaneous source supply. As a result, single intense- and narrow-peaked photoluminescence was obtained from the MQWs. Finally, the deep ultraviolet light emitting diodes with well-behaved I-V characteristic and strong electroluminescence in the range of 256–312 nm were fabricated successfully." @default.
• W2085174232 created "2016-06-24" @default.
• W2085174232 creator A5015839088 @default.
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• W2085174232 date "2013-05-01" @default.
• W2085174232 modified "2023-09-30" @default.
• W2085174232 title "Control of two-dimensional growth of AlN and high Al-content AlGaN-based MQWs for deep-UV LEDs" @default.
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• W2085174232 doi "https://doi.org/10.1063/1.4804247" @default.
• W2085174232 hasPublicationYear "2013" @default.
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