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- W2085194053 abstract "Ultrathin channel trench junctionless poly-Si field-effect transistor (trench JL-FET) with a 2.4-nm channel thickness is experimentally demonstrated. Dry etching process is used to form trench structures, which define channel thickness ( $T_{mathrm {CH}})$ and gate length ( $L_{G})$ . These devices ( $L_{G}= 0.5 mu $ m) show excellent performance in terms of steep subthreshold swing (100 mV/decade) and high $I_{mathrm{{scriptstyle ON}}}/ I_{mathrm{{scriptstyle OFF}}}$ current ratio ( $10^{6}$ A/A) and practically negligible drain-induced barrier lowering ( $sim 0$ mV/V). The $I_{rm mathrm{{scriptstyle ON}}}$ current of the trench JL-FET can be further increased by the quantum confinement effect. Importantly, owing to its excellent device characteristics and simplicity of fabrication, the trench JL-FET has great potential for using in advanced 3-D-stacked IC applications." @default.
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- W2085194053 date "2015-02-01" @default.
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- W2085194053 title "Characterizing the Electrical Properties of a Novel Junctionless Poly-Si Ultrathin-Body Field-Effect Transistor Using a Trench Structure" @default.
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- W2085194053 doi "https://doi.org/10.1109/led.2014.2378785" @default.
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