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- W2085203225 abstract "A three-layer voltage-biased heterojunction structure pGe/vZnSe/p+GaAs(Cs) should allow emission from the GaAs of electrons originally photoinduced in the Ge conduction band. Conceptually this is a possible approach to the development of a high-yield photocathode with low (0.7 eV) threshold energy." @default.
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- W2085203225 date "1971-11-15" @default.
- W2085203225 modified "2023-09-26" @default.
- W2085203225 title "Heterojunction Photocathode Concepts" @default.
- W2085203225 cites W2103217447 @default.
- W2085203225 doi "https://doi.org/10.1063/1.1653739" @default.
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