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- W2085349563 abstract "The feasibility of the application of double-gate dielectric stacks with fabricated by r.f. reactive magnetron sputtering hafnium oxide layers in nonvolatile semiconductor memory (NVSM) devices was investigated. Significant retention time was demonstrated. A very broad memory window (extrapolated at 10 years) of flat-band voltage (UFB) value of the order of 2.6 V was obtained. Moreover, the stability of the electrical characteristics of metal–insulator–semiconductor structures after gamma and electron irradiation have been observed, which proved that the investigated double-gate dielectric stacks are promising for future applications in NVSM radiation-hard devices." @default.
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- W2085349563 date "2015-01-01" @default.
- W2085349563 modified "2023-09-26" @default.
- W2085349563 title "Reactive magnetron sputtered hafnium oxide layers for nonvolatile semiconductor memory devices" @default.
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- W2085349563 doi "https://doi.org/10.1116/1.4906090" @default.
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