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• W2085358254 abstract "Using a pulsed-plasma enhanced chemical vapor deposition, silicon nitride (SiN) films were deposited in SiH4–NH3 plasma at room-temperature. The bias power and duty ratio were varied in the range of 30–90 W and 20–80%, respectively. Ion energy diagnostics was conducted and correlated with the SiN deposition rate. The diagnostic parameters examined include a high ion energy (Eh), a low ion energy (El), a high ion energy flux (Nh), a low ion energy flux (Nl), and a ratio of Nh–Nl. As duty ratio was varied at 30 W, the deposition rate strongly depended on the Eh (or El). For the same duty ratio variation at other high powers, it was highly correlated with the Nh/Nl. For the variations in the bias power at a given duty ratio, the deposition rate was closely related to the ion energy flux in the power range of 30–70 W. For all the variations, the deposition rate was varied between 234 and 305 Å/min. Meanwhile, the experimental data were modeled by using a neural network. The R2 value of neural network model is about 99.8% and the model was utilized to examine the effect of diagnostic variables for optimization of refractive index." @default.
• W2085358254 created "2016-06-24" @default.
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• W2085358254 date "2010-05-01" @default.
• W2085358254 modified "2023-09-27" @default.
• W2085358254 title "Deposition rate of SiN film grown by using a pulsed-PECVD at room-temperature" @default.
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• W2085358254 doi "https://doi.org/10.1016/j.cap.2010.02.033" @default.
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