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- W2085363430 abstract "Fabrication of metal-epitaxial insulator-semiconductor field-effect transistors by molecular beam epitaxial growth of CaF2 on Si is reported for the first time. These devices have a room-temperature electron mobility of 300 cm2/Vs and a threshold voltage of 0.5 V. The breakdown voltage of the films ranges from ≳105 to ≳106 V/cm in different regions of the film. These devices will be important for the characterization and improvement of the interface transport properties of the CaF2/Si system." @default.
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- W2085363430 date "1984-10-15" @default.
- W2085363430 modified "2023-09-26" @default.
- W2085363430 title "Fabrication of metal‐epitaxial insulator‐semiconductor field‐effect transistors using molecular beam epitaxy of CaF<sub>2</sub>on Si" @default.
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- W2085363430 doi "https://doi.org/10.1063/1.95410" @default.
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