Matches in SemOpenAlex for { <https://semopenalex.org/work/W2085364045> ?p ?o ?g. }
Showing items 1 to 96 of
96
with 100 items per page.
- W2085364045 endingPage "4363" @default.
- W2085364045 startingPage "4354" @default.
- W2085364045 abstract "This work investigates the characteristics of PtSi-silicided p+n shallow junctions fabricated by implanting BF+2 ions into either the Pt/Si (ITM scheme) or the PtSi/Si (ITS scheme) structure followed by annealing in N2 furnace at temperatures from 650 to 800 °C. For a structure with Pt film of 30 nm thickness or PtSi film of 60 nm thickness, the implantation energy ranges from 40 to 80 keV with a dose ranging from 1×1015 to 1×1016 cm−2. For the ITS samples with BF+2 implantation at 40 keV, all ions are confined in the PtSi layer; therefore, only a modified Schottky junction is formed by the diffusion of boron atoms from the PtSi film during the annealing. The junction depth may be as shallow as 30 nm from the PtSi/Si interface. A complete p+n junction is formed for the ITM samples with implantation at 40 keV as well as all the samples implanted at 80 keV. The junction thus obtained has a forward ideality factor lower than 1.02 and a reverse current density less than 0.2 nA/cm2 at −5 V. Activation energy measurement indicates that most of the implantation damages have been recovered after annealing at a temperature as low as 700 °C. The reverse area and peripheral leakage current density are separated by measuring diodes of different perimeter/area ratio. For good samples, the reverse peripheral current comes from the surface generation current within the depletion region underneath the field oxide. All of the experimental results reveal that either Pt or PtSi film can be employed as an efficient barrier film in the ITM/ITS technique to form excellent and ultrashallow junctions with a low thermal budget." @default.
- W2085364045 created "2016-06-24" @default.
- W2085364045 creator A5004925531 @default.
- W2085364045 creator A5033834225 @default.
- W2085364045 creator A5045562497 @default.
- W2085364045 date "1991-04-15" @default.
- W2085364045 modified "2023-10-06" @default.
- W2085364045 title "Formation of PtSi-contacted <i>p</i>+<i>n</i> shallow junctions by BF+2 implantation and low-temperature furnace annealing" @default.
- W2085364045 cites W1983539965 @default.
- W2085364045 cites W1987488126 @default.
- W2085364045 cites W1988555245 @default.
- W2085364045 cites W1988682054 @default.
- W2085364045 cites W1995871388 @default.
- W2085364045 cites W1999569901 @default.
- W2085364045 cites W2000544745 @default.
- W2085364045 cites W2005297070 @default.
- W2085364045 cites W2014893616 @default.
- W2085364045 cites W2018856415 @default.
- W2085364045 cites W2033979240 @default.
- W2085364045 cites W2043616185 @default.
- W2085364045 cites W2052136574 @default.
- W2085364045 cites W2084224410 @default.
- W2085364045 cites W2198627604 @default.
- W2085364045 doi "https://doi.org/10.1063/1.348359" @default.
- W2085364045 hasPublicationYear "1991" @default.
- W2085364045 type Work @default.
- W2085364045 sameAs 2085364045 @default.
- W2085364045 citedByCount "18" @default.
- W2085364045 countsByYear W20853640452013 @default.
- W2085364045 crossrefType "journal-article" @default.
- W2085364045 hasAuthorship W2085364045A5004925531 @default.
- W2085364045 hasAuthorship W2085364045A5033834225 @default.
- W2085364045 hasAuthorship W2085364045A5045562497 @default.
- W2085364045 hasConcept C108225325 @default.
- W2085364045 hasConcept C113196181 @default.
- W2085364045 hasConcept C121332964 @default.
- W2085364045 hasConcept C145148216 @default.
- W2085364045 hasConcept C16115445 @default.
- W2085364045 hasConcept C178790620 @default.
- W2085364045 hasConcept C185592680 @default.
- W2085364045 hasConcept C191897082 @default.
- W2085364045 hasConcept C192562407 @default.
- W2085364045 hasConcept C205200001 @default.
- W2085364045 hasConcept C20615193 @default.
- W2085364045 hasConcept C207740977 @default.
- W2085364045 hasConcept C2777855556 @default.
- W2085364045 hasConcept C41823505 @default.
- W2085364045 hasConcept C43617362 @default.
- W2085364045 hasConcept C49040817 @default.
- W2085364045 hasConcept C501308230 @default.
- W2085364045 hasConcept C544956773 @default.
- W2085364045 hasConcept C62520636 @default.
- W2085364045 hasConcept C62628764 @default.
- W2085364045 hasConcept C78434282 @default.
- W2085364045 hasConceptScore W2085364045C108225325 @default.
- W2085364045 hasConceptScore W2085364045C113196181 @default.
- W2085364045 hasConceptScore W2085364045C121332964 @default.
- W2085364045 hasConceptScore W2085364045C145148216 @default.
- W2085364045 hasConceptScore W2085364045C16115445 @default.
- W2085364045 hasConceptScore W2085364045C178790620 @default.
- W2085364045 hasConceptScore W2085364045C185592680 @default.
- W2085364045 hasConceptScore W2085364045C191897082 @default.
- W2085364045 hasConceptScore W2085364045C192562407 @default.
- W2085364045 hasConceptScore W2085364045C205200001 @default.
- W2085364045 hasConceptScore W2085364045C20615193 @default.
- W2085364045 hasConceptScore W2085364045C207740977 @default.
- W2085364045 hasConceptScore W2085364045C2777855556 @default.
- W2085364045 hasConceptScore W2085364045C41823505 @default.
- W2085364045 hasConceptScore W2085364045C43617362 @default.
- W2085364045 hasConceptScore W2085364045C49040817 @default.
- W2085364045 hasConceptScore W2085364045C501308230 @default.
- W2085364045 hasConceptScore W2085364045C544956773 @default.
- W2085364045 hasConceptScore W2085364045C62520636 @default.
- W2085364045 hasConceptScore W2085364045C62628764 @default.
- W2085364045 hasConceptScore W2085364045C78434282 @default.
- W2085364045 hasIssue "8" @default.
- W2085364045 hasLocation W20853640451 @default.
- W2085364045 hasOpenAccess W2085364045 @default.
- W2085364045 hasPrimaryLocation W20853640451 @default.
- W2085364045 hasRelatedWork W1540585561 @default.
- W2085364045 hasRelatedWork W1981646027 @default.
- W2085364045 hasRelatedWork W1982617917 @default.
- W2085364045 hasRelatedWork W2015042827 @default.
- W2085364045 hasRelatedWork W2022902442 @default.
- W2085364045 hasRelatedWork W2147656057 @default.
- W2085364045 hasRelatedWork W2604175831 @default.
- W2085364045 hasRelatedWork W2917180890 @default.
- W2085364045 hasRelatedWork W3004791968 @default.
- W2085364045 hasRelatedWork W4200007379 @default.
- W2085364045 hasVolume "69" @default.
- W2085364045 isParatext "false" @default.
- W2085364045 isRetracted "false" @default.
- W2085364045 magId "2085364045" @default.
- W2085364045 workType "article" @default.