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• W2085366274 startingPage "1379" @default.
• W2085366274 abstract "SiC films were selectively grown on patterned SiO 2 /Si(100) substrates using supersonic molecular jet epitaxy. For film growth, we employed methylsilane seeded in a carrier gas (He or H 2 ) as a reactant gas. Due to the high translational kinetic energy of methylsilane molecules in the supersonic jet, the growth temperature was as low as 670°C. The reduction of the growth temperature is explained in terms of a decrease in the activation energy and enhancement of the reaction efficiency from methylsilane to the SiC film during film growth. More importantly, a high growth rate of SiC at low temperature yielded submicron patterns of SiC without degradation of the SiO 2 mask." @default.
• W2085366274 created "2016-06-24" @default.
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• W2085366274 date "2001-03-01" @default.
• W2085366274 modified "2023-10-14" @default.
• W2085366274 title "Low-Temperature Epitaxial Growth of Cubic Silicon Carbide on Si(100) for Submicron-Pattern Fabrication" @default.
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• W2085366274 doi "https://doi.org/10.1143/jjap.40.1379" @default.
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