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- W2085372213 abstract "The effect of alkali-metal overlayers (K, Cs) on the room-temperature oxidation of the Ge(100)2 × 1 surface in the presence of molecular oxygen was investigated by core-level and valence-band photoemission spectroscopy using synchrotron radiation. In strong contrast to the behavior observed for many other elemental or compound semiconductor surfaces, the presence of a K or Cs layer does not enhance the oxidation rate as expected but rather poisoned it since the K (Cs) covered Ge(100)2 × 1 surface exhibits significantly smaller amount of oxides for the same oxygen exposures. This behavior indicates that K does not act as a catalyst as observed in the cases of many other semiconductor surfaces, but as an oxygen acceptor, in agreement with a classical model of electron affinity." @default.
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- W2085372213 date "1993-07-01" @default.
- W2085372213 modified "2023-10-03" @default.
- W2085372213 title "O2/K/Ge(100) 2 × 1 and O2/Cs/Ge(100) 2 × 1: puzzling behavior of K and Cs in the oxidation of germanium" @default.
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- W2085372213 doi "https://doi.org/10.1016/0169-4332(93)90265-d" @default.
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