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Matches in SemOpenAlex for { <https://semopenalex.org/work/W2085382094> ?p ?o ?g. }

• W2085382094 endingPage "1800" @default.
• W2085382094 startingPage "1792" @default.
• W2085382094 abstract "The research of the total dose response of high dielectric-constant hafnium oxide under gamma-ray irradiation is important for the anti-irradiation study of the ultra-deep submicron electronic devices in space application. The response of the HfO <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>2</sub> -based Metal Oxide Semiconductor (MOS) structure under various total doses of gamma-ray irradiation is investigated in this article. MOS capacitors which are composed of aluminum electrode, HfO <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>2</sub> gate dielectric on p-type silicon (Al/HfO2/p- Si) are prepared and tested before and after 60Co gamma-ray irradiation to access the irradiation induced damage in HfO <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>2</sub> /Si system. The surface morphology is obtained by the use of atomic force microscope(AFM), the chemical and physical characteristics are obtained using X-ray diffractometer (XRD) and X-ray photoelectron spectrometer(XPS), and the charge trapping characteristic of HfO <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>2</sub> film is calculated from the current-voltage(CV) curve by the semiconductor parameter testing. Crystallized HfO2, SiO <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>2</sub> and HfSiO <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>4</sub> are detected from the XRD spectrum and the crystallinity and grain size are found to decrease with the increase of gamma-ray total dose. Oxygen vacancy is found to increase after irradiation and it dominates the oxide charge trapping in the HfO <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>2</sub> /Si system. Schottky emission is found to be the charge transport mechanism from the currentvoltage curve at room temperature, and the barrier height of HfO <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>2</sub> /Si interface is found to decrease with the increase of irradiation. Irradiation induced defects would lower the HfO <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>2</sub> /Si interface barrier height and then give rise to the leakage current, this will consequently lead to the failure of HfO <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>2</sub> film and corresponding MOS structures." @default.
• W2085382094 created "2016-06-24" @default.
• W2085382094 creator A5009071140 @default.
• W2085382094 creator A5026267076 @default.
• W2085382094 creator A5038941004 @default.
• W2085382094 creator A5053325705 @default.
• W2085382094 date "2014-08-01" @default.
• W2085382094 modified "2023-09-25" @default.
• W2085382094 title "Total dose response of hafnium oxide based metal-oxide- semiconductor structure under gamma-ray irradiation" @default.
• W2085382094 cites W1977352735 @default.
• W2085382094 cites W1978508348 @default.
• W2085382094 cites W1981290669 @default.
• W2085382094 cites W1995940513 @default.
• W2085382094 cites W2031206645 @default.
• W2085382094 cites W2054064279 @default.
• W2085382094 cites W2062793141 @default.
• W2085382094 cites W2067989004 @default.
• W2085382094 cites W2074286565 @default.
• W2085382094 cites W2083469486 @default.
• W2085382094 cites W2133188122 @default.
• W2085382094 cites W2144102110 @default.
• W2085382094 cites W2159670966 @default.
• W2085382094 cites W2168749872 @default.
• W2085382094 doi "https://doi.org/10.1109/tdei.2014.004315" @default.
• W2085382094 hasPublicationYear "2014" @default.
• W2085382094 type Work @default.
• W2085382094 sameAs 2085382094 @default.
• W2085382094 citedByCount "20" @default.
• W2085382094 countsByYear W20853820942017 @default.
• W2085382094 countsByYear W20853820942018 @default.
• W2085382094 countsByYear W20853820942019 @default.
• W2085382094 countsByYear W20853820942020 @default.
• W2085382094 countsByYear W20853820942021 @default.
• W2085382094 countsByYear W20853820942022 @default.
• W2085382094 countsByYear W20853820942023 @default.
• W2085382094 crossrefType "journal-article" @default.
• W2085382094 hasAuthorship W2085382094A5009071140 @default.
• W2085382094 hasAuthorship W2085382094A5026267076 @default.
• W2085382094 hasAuthorship W2085382094A5038941004 @default.
• W2085382094 hasAuthorship W2085382094A5053325705 @default.
• W2085382094 hasConcept C111337013 @default.
• W2085382094 hasConcept C113196181 @default.
• W2085382094 hasConcept C121332964 @default.
• W2085382094 hasConcept C133386390 @default.
• W2085382094 hasConcept C165801399 @default.
• W2085382094 hasConcept C166972891 @default.
• W2085382094 hasConcept C172385210 @default.
• W2085382094 hasConcept C175708663 @default.
• W2085382094 hasConcept C178790620 @default.
• W2085382094 hasConcept C185544564 @default.
• W2085382094 hasConcept C185592680 @default.
• W2085382094 hasConcept C191897082 @default.
• W2085382094 hasConcept C192562407 @default.
• W2085382094 hasConcept C2779851234 @default.
• W2085382094 hasConcept C46141821 @default.
• W2085382094 hasConcept C49040817 @default.
• W2085382094 hasConcept C52192207 @default.
• W2085382094 hasConcept C62520636 @default.
• W2085382094 hasConceptScore W2085382094C111337013 @default.
• W2085382094 hasConceptScore W2085382094C113196181 @default.
• W2085382094 hasConceptScore W2085382094C121332964 @default.
• W2085382094 hasConceptScore W2085382094C133386390 @default.
• W2085382094 hasConceptScore W2085382094C165801399 @default.
• W2085382094 hasConceptScore W2085382094C166972891 @default.
• W2085382094 hasConceptScore W2085382094C172385210 @default.
• W2085382094 hasConceptScore W2085382094C175708663 @default.
• W2085382094 hasConceptScore W2085382094C178790620 @default.
• W2085382094 hasConceptScore W2085382094C185544564 @default.
• W2085382094 hasConceptScore W2085382094C185592680 @default.
• W2085382094 hasConceptScore W2085382094C191897082 @default.
• W2085382094 hasConceptScore W2085382094C192562407 @default.
• W2085382094 hasConceptScore W2085382094C2779851234 @default.
• W2085382094 hasConceptScore W2085382094C46141821 @default.
• W2085382094 hasConceptScore W2085382094C49040817 @default.
• W2085382094 hasConceptScore W2085382094C52192207 @default.
• W2085382094 hasConceptScore W2085382094C62520636 @default.
• W2085382094 hasIssue "4" @default.
• W2085382094 hasLocation W20853820941 @default.
• W2085382094 hasOpenAccess W2085382094 @default.
• W2085382094 hasPrimaryLocation W20853820941 @default.
• W2085382094 hasRelatedWork W1542877727 @default.
• W2085382094 hasRelatedWork W1989244688 @default.
• W2085382094 hasRelatedWork W1992987656 @default.
• W2085382094 hasRelatedWork W2014800410 @default.
• W2085382094 hasRelatedWork W2037491502 @default.
• W2085382094 hasRelatedWork W2046556491 @default.
• W2085382094 hasRelatedWork W2085002967 @default.
• W2085382094 hasRelatedWork W2473548671 @default.
• W2085382094 hasRelatedWork W2544293659 @default.
• W2085382094 hasRelatedWork W4253731651 @default.
• W2085382094 hasVolume "21" @default.
• W2085382094 isParatext "false" @default.
• W2085382094 isRetracted "false" @default.
• W2085382094 magId "2085382094" @default.
• W2085382094 workType "article" @default.