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- W2085385466 abstract "Schottky's model for the barrier height of a metal-semiconductor interface predicts a value of 1.1 eV for Ga on p-type Si. Previous investigations of such Schottky diodes have shown that this barrier height is actually very small. Our results on hydrogen-passivated Si show an intermediate barrier height that depends strongly on the properties of the passivated surface. We explain this discrepancy as a case of a mixed-phase interface, where Ga forms a high Schottky barrier to the passivated Si surface and a low barrier to residual defects of the passivated surface." @default.
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- W2085385466 date "1994-04-10" @default.
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- W2085385466 title "Schottky Barriers and the Reactivity of the Interface" @default.
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- W2085385466 doi "https://doi.org/10.1209/0295-5075/26/2/010" @default.
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