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• W2085406501 startingPage "172502" @default.
• W2085406501 abstract "Magnetic tunnel junctions (MTJs) using L10-ordered CoPt electrodes with perpendicular magnetic anisotropy were fabricated. Full-epitaxial CoPt∕MgO∕CoPt-MTJs were prepared onto single crystal MgO-(001) substrate by sputtering method. X-ray diffraction analyses revealed that both bottom and top CoPt electrodes were epitaxially grown with (001)-orientation. The L10-chemical order parameter of 0.82 was obtained for the bottom CoPt electrode deposited at substrate temperature of 600°C. The transport measurements with applying magnetic field perpendicular to the film plane showed a tunnel magnetoresistance ratio of 6% at room temperature and 13% at 10K." @default.
• W2085406501 created "2016-06-24" @default.
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• W2085406501 date "2008-04-28" @default.
• W2085406501 modified "2023-09-25" @default.
• W2085406501 title "Tunneling magnetoresistance of magnetic tunnel junctions using perpendicular magnetization L10-CoPt electrodes" @default.
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• W2085406501 doi "https://doi.org/10.1063/1.2913163" @default.
• W2085406501 hasPublicationYear "2008" @default.
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