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- W2085426280 abstract "Abstract Residual lattice strain in a bonded SOI wafer and its influence on the electron mobility were investigated as a function of heat-treatment temperature ranging from 900 to 1050°C and duration from 6 to 30 h. The change in residual strain was measured by using the X-ray diffraction method. In as-received SOI wafers, tensile strain (tensile stress along the direction parallel to the surface) of the order of 10 −5 –10 −4 was observed. For the specimens annealed at above 950°C, the strain varied abruptly from a tensile to a compressive one at an annealing time of 12–15 h, then approached a certain value with increasing annealing time. On the other hand, the remaining strain of the specimen annealed at 900°C exhibited the tensile region only, and did not achieve to the compressive one, even for long treatment. Significant variation in the electron Hall mobility was observed for both 1.5 and 5 μm thick SOI layers as the residual strain changes. Although samples with no strain showed identical mobility to the value in a bulk Si, the presence of the strain may anomalously affect the electron transportation." @default.
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- W2085426280 date "1999-06-01" @default.
- W2085426280 modified "2023-10-02" @default.
- W2085426280 title "Thermal behavior of residual strain in silicon-on-insulator bonded wafer and effects on electron mobility" @default.
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- W2085426280 doi "https://doi.org/10.1016/s0038-1101(99)00035-0" @default.
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