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• W2085426441 endingPage "1209" @default.
• W2085426441 startingPage "1209" @default.
• W2085426441 abstract "Crystalline BaTiO 3 thin films were prepared directly on Ti substrates in aqueous solutions of Ba(OH) 2 at 150 °C by a hydrothermal-electrochemical method and their electrical properties for capacitors were measured. The leakage current-voltage characteristics exhibited rectifications, the degree of which depended on the top electrodes used. Resistivities as high as 10 12 Ω· cm were obtained in the voltage range up to 2 V for the 0.40-µ m-thick BaTiO 3 thin film and its breakdown voltage was higher than 12 V. The grown films were paraelectric with dielectric constants of 340–350 and dielectric losses of 7–10% at 1 kHz, 0.1 V rms , and 25 °C. The capacitance variation with dc bias voltage from -2.5 to +2.5 V was 9% of the zero-bias value, and that with temperature from -60° to 130 °C was 24% of the room-temperature value." @default.
• W2085426441 created "2016-06-24" @default.
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• W2085426441 date "1997-03-01" @default.
• W2085426441 modified "2023-09-26" @default.
• W2085426441 title "Electrical Properties of BaTiO₃ Thin Film Grown by the Hydrothermal-Electrochemical Method" @default.
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• W2085426441 doi "https://doi.org/10.1143/jjap.36.1209" @default.
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