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- W2085455851 abstract "The effects of a thin interfacial insulating layer between the deposited polysilicon layer and monocrystalline silicon substrate on <tex xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>I-V</tex> characteristics of polysilicon emitter transistors are investigated. It is found that the position of this interfacial layer relative to the emitter-base junction has a crucial influence on the device characteristics. The observed highly nonlinear behavior of the Gummel plot is shown to result from the lacking of the monocrystalline emitter in the substrate. An interface model with trap-assisted tunneling is used to simulate device characteristics and qualitatively good agreement with experiments is achieved. A physical explanation is further given to such nonlinearity and a new regime of negative differential resistance in the I <inf xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>B</inf> versus V <inf xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>BE</inf> curve is predicted based on computer simulation." @default.
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- W2085455851 date "1985-10-01" @default.
- W2085455851 modified "2023-09-26" @default.
- W2085455851 title "Gummel plot nonlinearities in polysilicon emitter transistors—Including negative differential resistance behavior" @default.
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- W2085455851 doi "https://doi.org/10.1109/edl.1985.26211" @default.
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